Selected Publications

R.J. Ricker, S.R. Provence, D.T. Norton, T.F. Boggess, Jr., and J.P. Prineas
Broadband Mid-Infrared Superlattice Light-Emitting Diodes
J. Appl. Phys. 121, 185701 (2017)

K. Zhang, V. Ray, P. Herrera-Fierro, J.R. Sink, F. Toor, J.P. Prineas
Selective-Area Growth of InAs Nanowire Arrays on Si3N4/Si(111) by Molecular Beam Epitaxy
​Proceedings of the SPIE, 10114 (2017)

J.P. Prineas, R.J. Ricker, A. Muhowski, C. Bogh, S.R. Provence, and T.F. Boggess
Cascading, Efficiency, and Broadband Emission in Mid-Infrared Superlattice Light Emitting Diodes (SLEDs)
Proceedings of the SPIE, 10124-19 (2017)

Jacob Benedict, Rodney McGee, Joshua Marks, Kassem Nabha, Nicholas Waite, Garrett Ejzak, Jonathan Dickason, Hamzah Ahmed, Miguel Hernandez, Peyman Barakhshan, Tyler Browning, Jeffrey Volz, Russell J. Ricker, Fouad Kiamilev, John Prineas, Thomas Boggess
1Kx1K Resolution Infrared LED Scene Projector at 24μm Pixel Pitch
GOMACTech Proceedings, 32-22 (2017)

G. Ejzak, J. Dickason, J. Marks, K. Nabha, R. McGee, N. Waite, J. Benedict, M. Hernandez, S. Provence, D. Norton, J. Prineas, K. Goossen, F. Kiamilev, T. Boggess
​512x512, 100 Hz Mid-Wave Infrared LED Microdisplay System
J. Display Technol. 12, 1139 (2016)​

Russell Ricker, Andrew Hudson, Sydney Provence, Dennis T. Norton, Jonathon T. Olesberg, Lee M. Murray, John P. Prineas, Thomas F. Boggess, Jr.
Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes
IEEE J. Quantum Electron. 51, 3200406 (2015).

S. R. Provence, R. Ricker, Y. Aytac, T. F. Boggess, and J. P. Prineas 
High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs​
J. Appl. Phys. 118, 123108 (2015).

T.K. Baldwin, C. Phelps, H. Wang, J.P. Prineas
Persistence of Trions and Quenching of Excitons in Optically-Induced Two Dimensional Electron Gases in Mixed-Type GaAs/AlAs Quantum Wells
JOSA B 31, 3138 (2014).

M. B. Wootten, J. Tan, Y.J. Chien, J.T. Olesberg, J.P. Prineas
Superluminescent diodes at 2.4 mms from GaInAsSb/AlGaAsSb quantum well heterostructures for optical glucose sensing
Semiconductor Sci. Technol. 29, 115014 (2014).

L.M. Murray, K.S. Lokovic, B.V. Olson, A. Yildirim, T.F. Boggess and J.P. Prineas
Effects of growth rate variations on the lifetime and interface structure of InAs/GaSb superlattices
J. of Crystal Growth 386, 194 (2014).

D.T. Norton, J.T. Olesberg, R.T. McGee, N.A. Waite, J. Dickason, K.W. Goossen, J. Lawler, G. Sullivan, A. Ikhlassi, F. Kiamilev, E.J. Koerperick, L.M. Murray, J.P. Prineas, T.F. Boggess,
512 x 512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
IEEE J. of Quantum Electron. 49, 753 (2013).

B. V. Olson, L. M. Murray, J. P. Prineas, M. E. Flatte, and T. F. Boggess
Direct all-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattice
Appl. Phys. Lett. 102, 202101 (2013)

A. Yildirim, J.P. Prineas
Strain- and kinetically induced suppression of phase separation in metastable and unstable GaInAsSb alloys on GaSb substratres for mid-infrared applications
J. Vac. Sci. Technol. B 31, 03C125 (2013)

L.M. Murray, A. Yildirim, S.R. Provence, D.T. Norton, T.F. Boggess, J.P. Prineas
Causes and elimination of pyramidal defects in GaSb-based epitaxial layers
J. Vac. Sci. Technol. B 31, 03C108 (2013)

 B.V. Olson, E.A. Shaner, J.K. Kim, J.F. Klem, S.D. Hawkins, L.M. Murray, J.P. Prineas, M.E. Flatte, and T.F. Boggess
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice 
Appl. Phys. Lett. 101, 092109 (2012)

L.M. Murray, D.T. Norton, J.T. Olesberg, T.F. Boggess, J.P. Prineas
Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes
J. Vac. Sci. Technol. B 30, 021203 (2012)

A. Yildirim, J.P.Prineas
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 um infrared materials
J. Vac. Sci. Technol. B 30, 02B104 (2012)

C. Phelps, S. O’Leary, J. Prineas, H.I. Wang
Coherent spin dynamics of donor bound electrons in GaAs
Phys. Rev. B 84, 085205 (2011)

Carey Phelps, John Prineas, and Hailin Wang
Excitonic nonlinear optical response from correlation-enhanced tunneling in mixed-type GaAs Quantum wells
Phys. Rev. B 83, 153302 (2011)

E. J. Koerperick, J. T. Olesberg, D. T. Norton, B. V. Olson, J. P. Prineas, and T. F. Boggess
Cascaded Superlattice InAs/GaSb Light Emitting Diodes for Operation in the Long-Wave Infrared
IEEE J. Quantum Electron. 47, 50 (2011)

J.L. Tomaino, A.D. Jameson, Y.S. Lee, J.P. Prineas, J.T. Steiner, M. Kira, S.W. Koch
Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses
Solid-State Electron. 54, 1125 (2010

E.J. Koerperick, L.M. Murray, D.T. Norton, T.F. Boggess, J.P.Prineas
Optimization of MBE-Grown GaSb Buffer Layers and Surface Effects of Antimony Stabilization Flux
J. Crystal Growth 312, 185 (2010)

A.D. Jameson, J.L. Tomaino, Y.S. Lee, J.P. Prineas, J.T. Steiner, M. Kira, and S.W. Koch
Nonlinear optical transients in the optical response of semiconductor quantum wells resonantly driven by narrowband terahertz pulses
Appl. Phys. Lett. 95, 201107 (2009).

N. Das, M. Taysing-Lara, K. Olver, F. Kiamilev, J.P. Prineas, J.T. Olesberg, E.J. Koerperick, L. Murray, and T.F. Boggess
Flip chip bonding of 68x68 MWIR LED arrays
IEEE Transactions on Electronics Packaging Manufacturing 32, 9 (2009).

E.J. Koerperick, J.T. Olesberg, J.L. Hicks, J.P. Prineas, and T.F. Boggess
High power MWIR cascaded InAs/GaSb superlattice light emitting diodes
IEEE J. Quantum Electron. 45, 849 (2009

J.P. Prineas, J.Yager, J.T. Olesberg, S. Seyedmohamadi
Leakage mechanisms and potential performance of molecular-beam, epitaxially-grown GaInAsSb 2.4 µm photodiode detectors
J. of Appl. Phys. 103, 104511 (2008).

E.J. Koerperick, J.T. Olesberg, J.L. Hicks, J.P. Prineas, and T.F. Boggess
Active region cascading for improved performance in InAs/GaSb superlattice LEDs
IEEE J. Quantum Elecron. 44, 1242 (2008).

E. J. Koerperick, J. T. Olesberg, T.F. Boggess, J. L. Hicks, L. S. Wassink, L. M. Murray, J. P. Prineas
InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 um
Appl. Phys. Lett. 92, 121106 (2008).

J. R. Danielson, Yun-Shik Lee, J. P. Prineas, J. T. Steiner, M. Kira, and S.W. Koch,
Interaction of strong single-cycle terahertz pulses with semiconductor quantum wells
Phys. Rev. Lett. 99, 237401 (2007)

S. O’Leary, H. Wang, J.P. Prineas
Coherent Zeeman resonance from electron spin coherence in a mixed-type GaAs/AlAs quantum well
Opt. Lett. 32, 569 (2007)

W.J. Johnston, J.P. Prineas, A.L. Smirl
Ultrafast all-optical switching in Bragg-spaced quantum wells at 80K
J. of Appl. Phys. Communication 101, 046101 (2007)

J.P. Prineas, J.T. Olesberg, J. Yager, C. Cao, M. Reddy
Cascaded active regions in 2.4 micron GaInAsSb light-emitting diodes
Appl. Phys. Lett. 89, 211108 (2006).

J.P. Prineas, W.J. Johnston, M. Yildirim, J. Zhao, A. Smirl
Tunable slow light in Bragg spaced quantum wells
Appl. Phys. Lett. 89, 241106 (2006)

J.P. Prineas, C. Cao, M. Yildirim, W. Johnston, M. Reddy
Resonant photonic bandgap structures realized from molecular-beam-epitaxially grown InGaAs/GaAs Bragg-spaced quantum wells
J. of Appl. Phys. 100, 063101 (2006)

M.H.M Reddy,  J.T. Olesberg, C. Cao, J.P. Prineas
MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination
Semiconductor Sci. Technol. 21, 267-72 (2006)

M. Yildirim, J.P. Prineas, E. J. Gansen, A. L. Smirl
A near room-temperature all-optical polarization switch based on the excitation of spin-polarized virtual carriers in quantum wells
J. of Appl. Phys. 98, 063505-1 to 4  (2005)

W.J. Johnston, M. Yildirim, J.P. Prineas, A.L. Smirl, H.M. Gibbs, G. Khitrova
All-optical, spin-dependent polarization switching in Bragg-spaced quantum well structures
Appl. Phys. Lett. 87, 101113-1 to 3  (2005)

S. Chatterjee, C. Ell, S. Mosor, G. Khitrova, H.M. Gibbs, W. Hoyer, M. Kira, S.W. Koch,  J.P. Prineas, H. Stolz
Excitonic light does not have to come from excitons
Optics and Photonics News 15 (12), 42 (2004)

M. Schaarschmidt, A. Knorr, J. Foerstner, J.P. Prineas, J. Kuhl, G. Khitrova, H.M. Gibbs, S.W. Koch
Adiabatically driven electron dynamics in a resonant photonic bandgap: Optical switching of a Bragg periodic semiconductor 
Physical Review B (Rapid Communication) 70, 233302-1 to 4 (2004)

S. Chatterjee, C. Ell, S. Moser, G. Khitrova, H.M. Gibbs, W. Hoyer, M. Kira, S.W. Koch, J.P. Prineas, H. Stolz
Excitonic photoluminescence in semiconductor quantum wells: Plasma versus excitons
Phys. Rev. Lett.  92, 067402-1 to 4 (2003)

W.N. Xiao, J.Y. Zhou, J.P. Prineas
Storage of ultrashort optical pulses in a resonantly absorbing Bragg reflector
Optics Express 11, 3277-83 (2003)

J.P. Prineas, J.Y. Zhou, J. Kuhl, H.M. Gibbs, G. Khitrova, S.W. Koch, A. Knorr
Ultrafast ac Stark effect switching of the active photonic bandgap from Bragg-periodic semiconductor quantum wells
Appl. Phys. Lett. 81, 4332-4 (2002)

Note:  Ref. [20] was selected to appear in the Virtual Journal of Nanoscale Science & Technology; and in Virtual Journal of Ultrafast Science

B. Grote, C. Ell, H.M. Gibbs, G. Khitrova, S.W. Koch, J.P. Prineas, and J. Shah
Resonance Rayleigh scattering from semiconductor heterostructures:  The role of radiative coupling 
Phys. Rev. B 64, 045330-1-13 (2001)

Y.S. Lee, T.B. Norris, A. Maslov, D.S. Citrin, J.P. Prineas, G. Khitrova, H.M. Gibbs
Large-signal coherent control of normal modes in quantum-well semiconductor microcavity
Appl. Phys. Lett. 78, 3941-3943 (2001)

J.P. Prineas, C. Ell, E.S. Lee, G. Khitrova, and H.M. Gibbs
Exciton-polariton eigenmodes in light-coupled In0.04Ga0.96As/GaAs semiconductor multiple quantum well periodic structures
Phys. Rev. B 61, 13 863-72 (2000)

C. Ell, B. Grote, G. Khitrova, H.M. Gibbs, S. W. Koch, J.P. Prineas, and J. Shah
Quantum wells coupled by light:  Eigenmode dynamics in resonant Rayleigh scattering
Optics and Photonics News 11 (12), 40-41 (2000)

J.P. Prineas, J. Shah, B. Grote, C. Ell, G. Khitrova, H.M. Gibbs, and S.W. Koch
Radiative coupling dominance of resonant Rayleigh scattering in semiconductor multiple quantum well structures
Phys. Rev. Lett. 85, 3041-44 (2000)

C. Ell, P. Brick, M. Hübner, O. Lyngnes, J.P. Prineas, G. Khitrova, H.M. Gibbs, M. Kira, F. Jahnke, S.W. Koch, D.G. Deppe, and D.L. Huffaker
Quantum correlations in the nonperturbative regime of semiconductor microcavities
Phys. Rev. Lett. 85, 5392-95 (2000)

C. Spiegelberg, H.M. Gibbs, J.P. Prineas, C. Ell, P. Brick, E.S. Lee, G. Khitrova, V.S. Zapasskii, M. Hubner, S.W. Koch
Photoluminescence and pump-probe spectroscopy of Bragg and Off-Bragg quantum wells
Phys. Stat. Sol. (b) 221, 85-91 (2000)

Y.S. Lee, T.B. Norris, J.P. Prineas, G. Khitrova, H.M. Gibbs
Nondegenerate coherent control of polariton modes in a quantum-well semiconductor microcavity
Phys. Stat. Sol. (b) 221, 121-125 (2000)

J.P. Prineas, C. Ell, E.S. Lee, G. Khitrova, and H.M. Gibbs
Identification of individual normal modes in light coupled semiconductor structures
Phys. Stat. Sol. (a) 178, 555-58 (2000)

P. Brick, C. Ell, M. Hübner, J.P. Prineas, G. Khitrova and H.M. Gibbs
Coulomb memory effects and higher order Coulomb correlations in the excitonic optical Stark effect
Phys. Stat. Sol. (a) 178, 459-62 (1999)

C. Ell, M. Hubner, J.P. Prineas, P. Brick, E.S. Lee, G. Khitrova, and H.M. Gibbs
Normal mode coupling in optical lattices of excitons in periodic quantum well structure
Optics and Photonics News 10 (12) , 25-26 (1999)

S.W. Koch, C. Sieh, T. Meier, F. Jahnke, A. Knorr, P. Brick, M. Hubner, C. Ell, J. Prineas, G. Khitrova, H.M. Gibbs
Theory of coherent effects in semiconductors
J. Lumin. 83-84, 1-6 (1999)

M. Hübner, J.P. Prineas, C. Ell, P. Brick, E.S. Lee, G. Khitrova, H.M. Gibbs, and S.W. Koch
Optical lattices achieved by excitons in periodic quantum well structures
Phys. Rev. Lett. 83, 2841-44 (1999)

C. Sieh, T. Meier, A. Knorr, S.W. Koch, P. Brick, M. Hübner, C. Ell, J. Prineas, G. Khitrova, and H.M. Gibb
Coulomb memory signatures in the excitonic optical Stark effect
Phys. Rev. Lett. 82, 3112-15 (1999)

C. Ell, J.P. Prineas, T.R. Nelson Jr., S. Park, H.M. Gibbs, G. Khitrova, S.W. Koch, and R. Houdre
Influence of structural disorder and light coupling on the excitonic response of semiconductor microcavities
Phys. Rev. Lett.  80, 4795-98 (1998)

G. Khitrova, D.V. Wick, J.D. Berger, C. Ell, J.P. Prineas, T.R. Nelson, Jr., O. Lyngnes, H.M. Gibbs, M. Kira, F. Jahnke, S.W. Koch, W. Ruehle, S. Hallstein
Excitonic effects, luminescence, and lasing in semiconductor microcavities 
Phys. Stat. Sol. (b)  206, 3-17 (1998)

O. Lyngnes, J.D. Berger, J.P. Prineas, S. Park, G. Khitrova, H.M. Gibbs, F. Jahnke, M. Kira, and S.W. Koch
Nonlinear emission dynamics from semiconductor microcavities in the nonperturbative regime
Solid State Com. 104, 297-300 (1997)

O.B. Gusev, J.P. Prineas, E.K. Lindmark, M.S. Bresler, G. Khitrova, H.M. Gibbs, I.N. Yassievich, B.P. Zakharchenya, V.F. Masterov
Er in molecular beam epitaxy grown GaAs/AlGaAs structures
J. Appl. Phys. 82, 1815-23 (1997)

T.R. Nelson, Jr., J.P. Prineas, G. Khitrova, H.M. Gibbs, J.D. Berger, and E.K. Lindmark
Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAs/GaAs mirrors
Appl. Phys. Lett. 69, 3031-33 (1997)